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SiHF9Z24 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • - 60 0.28.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = - 10 V 19 5.4 11 Single S FEATURES - 60 0.28 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 DESCRIPTION G S G D D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.