SiHF9Z24 Datasheet | Vishay

FEATURES - 60 0.28 - Dynamic d V/dt Rating - Repetitive Avalanche Rated - P-Channel - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 DESCRIPTION S G D D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRF9Z24Pb F Si HF9Z24-E3 IRF9Z24 Si HF9Z24 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT - 60 ± 20 - 11 - 7.7 - 44 0.40 240 - 11 6.0 60 - 4.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 m H, RG = 25 Ω, IAS = - 11 A (see fig. 12). c. ISD ≤ - 11 A, d I/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91090 S-Pending-Rev. A, 20-Jun-08 .vishay. 1 WORK-IN-PROGRESS IRF9Z24, Si...