SiHF9Z14S Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Advanced Process Technology - Surface Mount (IRF9Z14S, Si HF9Z14S) - Low-Profile Through-Hole (IRF9Z14L, Si HF9Z14L) - 175 °C Operating Temperature - Fast Switching - P-Channel - Fully Avalanche Rated - pliant to Ro HS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of acmodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9Z14L, Si HF9Z14L) is available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HF9Z14S-GE3 IRF9Z14SPb F Si HF9Z14S-E3 D2PAK (TO-263) Si HF9Z14STRL-GE3a IRF9Z14STRLPb Fa Si HF9Z14STL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery d V/dtc, e TC = 25 °C TA = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum...