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SiHF9Z14L - Power MOSFET

Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRF9Z14S, SiHF9Z14S).
  • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • P-Channel.
  • Fully Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SiHF9Z14L
Manufacturer Vishay
File Size 193.10 KB
Description Power MOSFET
Datasheet download datasheet SiHF9Z14L Datasheet
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IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single 0.50 I2PAK (TO-262) D2PAK (TO-263) S G SD D G S G D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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