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Vishay Intertechnology Electronic Components Datasheet

SiHFBE20 Datasheet

Power MOSFET

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Power MOSFET
IRFBE20, SiHFBE20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
800
VGS = 10 V
38
5.0
21
Single
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D
6.5
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRFBE20PbF
SiHFBE20-E3
IRFBE20
SiHFBE20
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 104 mH, RG = 25 Ω, IAS = 1.8 A (see fig. 12).
c. ISD 1.8 A, dI/dt 80 A/µs, VDD 600, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91117
S-81262-Rev. A, 07-Jul-08
LIMIT
800
± 20
1.8
1.2
7.2
0.43
180
1.8
5.4
54
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SiHFBE20 Datasheet

Power MOSFET

No Preview Available !

IRFBE20, SiHFBE20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.3
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
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Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.1 Ab
VDS = 100 V, ID = 1.1 Ab
800 -
-V
- 0.98 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100
µA
- - 500
- - 6.5 Ω
0.80 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 1.8 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 400 V, ID = 1.8 A,
RG = 18 Ω, RD = 230 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
530 -
150 - pF
90 -
- 38
- 5.0 nC
- 21
8.2 -
17 -
ns
58 -
27 -
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
LD
LS
IS
ISM
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
D
G
S
- 4.5 -
nH
- 7.5 -
- - 1.8
A
- - 7.2
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
TJ = 25 °C, IS = 1.8 A, VGS = 0 Vb
- - 1.4 V
trr
TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/µsb
-
380 570 ns
Qrr - 0.94 1.4 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91117
S-81262-Rev. A, 07-Jul-08


Part Number SiHFBE20
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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