SiHFBE30S Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. pulse width limited by maximum junction temperature (see fig. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig.
SiHFBE30S Key Features
- Halogen-free According to IEC 61249-2-21
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC