SiHFBE20 Datasheet | Vishay

FEATURES 800 6.5 - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Available Ro HS- PLIANT .. DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFBE20Pb F Si HFBE20-E3 IRFBE20 Si HFBE20 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 800 ± 20 1.8 1.2 7.2 0.43 180 1.8 5.4 54 2.0 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 104 m H, RG = 25 Ω, IAS = 1.8 A (see fig. 12). c. ISD ≤ 1.8 A, d I/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91117 S-81262-Rev. A, 07-Jul-08 .vishay. 1 IRFBE20, Si HFBE20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case...