Datasheet Details
| Part number | SiHFBE30L |
|---|---|
| Manufacturer | Vishay |
| File Size | 472.30 KB |
| Description | Power MOSFET |
| Download | SiHFBE30L Download (PDF) |
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| Part number | SiHFBE30L |
|---|---|
| Manufacturer | Vishay |
| File Size | 472.30 KB |
| Description | Power MOSFET |
| Download | SiHFBE30L Download (PDF) |
|
|
|
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D2PAK (TO-263) SiHFBE30STRL-GE3a IRFBE30STRLPbFa SiHFBE30STL-E3a I2PAK (TO-262) SiHFBE30L-GE3 IRFBE30LPbF SiHFBE30L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating;
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 78 9.6 45 Single 3.0 I2PAK (TO-262) D2PAK (TO-263) D G G SD GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
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