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Vishay Intertechnology Electronic Components Datasheet

SiHFBE30L Datasheet

Power MOSFET

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IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
800
VGS = 10 V
78
9.6
45
Single
3.0
I2PAK
(TO-262)
D2PAK
(TO-263)
D
G
G
SD
GD S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
S
N-Channel MOSFET
D2PAK (TO-263)
SiHFBE30S-GE3
IRFBE30SPbF
SiHFBE30S-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D2PAK (TO-263)
SiHFBE30STRL-GE3a
IRFBE30STRLPbFa
SiHFBE30STL-E3a
I2PAK (TO-262)
SiHFBE30L-GE3
IRFBE30LPbF
SiHFBE30L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12).
c. ISD 4.1 A, dI/dt 100 A/μs, VDD 600 V, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
800
± 20
4.1
2.6
16
1.0
260
4.1
13
125
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91119
S11-1053-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHFBE30L Datasheet

Power MOSFET

No Preview Available !

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
Case-to-Sink, Flat, Greased Surface
RthCS
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.5 Ab
VDS = 100 V, ID = 2.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.1 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 400 V, ID = 4.1 A,
Rg = 12 , RD = 95 , see fig. 10b
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
800
-
2.0
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.90 - V/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 3.0
- -S
1300
310
190
-
-
-
12
33
82
30
4.5
7.5
-
-
-
78
9.6
45
-
-
-
-
-
-
pF
nC
ns
nH
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 4.1
A
- - 16
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.1 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 480 720 ns
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μsb
Qrr - 1.8 2.7 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91119
S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHFBE30L
Description Power MOSFET
Maker Vishay Siliconix
Total Page 10 Pages
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