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SiHFBE30S Datasheet Power MOSFET

Manufacturer: Vishay

Download the SiHFBE30S datasheet PDF. This datasheet also includes the SiHFBE30L variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SiHFBE30L_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

D2PAK (TO-263) SiHFBE30STRL-GE3a IRFBE30STRLPbFa SiHFBE30STL-E3a I2PAK (TO-262) SiHFBE30L-GE3 IRFBE30LPbF SiHFBE30L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.

Repetitive rating;

Overview

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 78 9.6 45 Single 3.0 I2PAK (TO-262) D2PAK (TO-263) D G G SD GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC.

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