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SiHFD9020 Datasheet Power MOSFET

Manufacturer: Vishay

General Description

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Overview

IRFD9020, SiHFD9020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 19 5.4 11 Single - 60 0.

Key Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • P-Channel.
  • 175 °C Opertaing Temperature.
  • Fast Switching.
  • Lead (Pb)-free Available S Available RoHS.