SiHFD9110 Datasheet | Vishay

FEATURES - - - - - - - - Dynamic d V/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available Ro HS- PLIANT .. HEXDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD9110Pb F Si HFD9110-E3 IRFD9110 Si HFD9110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s LIMIT - 100 ± 20 - 0.70 - 0.49 - 5.6 0.0083 140 - 0.7 0.13 1.3 - 5.5 - 55 to + 175 300d W/°C m J A m J W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 52 m H, RG = 25 Ω, IAS = - 2.0 A (see fig. 12). c. ISD ≤ - 4.0 A, d I/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91138 S-81361-Rev. A, 07-Jul-08 .vishay. 1 IRFD9110, Si HFD9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL Rth JA TYP. MAX. 120 UNIT °C/W SPECIFICATIONS TJ = 25...