SiHFD9020 Datasheet | Vishay

FEATURES - Dynamic dv/dt Rating - Repetitive Avalanche Rated - For Automatic Insertion - End Stackable - P-Channel - 175 °C Opertaing Temperature - Fast Switching - Lead (Pb)-free Available Available Ro HS- PLIANT .. HEXDIP DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD9020Pb F Si HFD9020-E3 IRFD9020 Si HFD9020 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VGS ID IDM Energyb EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s LIMIT ± 20 - 1.6 - 1.1 - 13 0.0083 140 - 1.6 0.13 1.3 - 4.5 - 55 to + 175 300d W/°C m J A m J W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 15 m H, RG = 25 Ω, IAS = - 3.2 A (see fig. 12). c. ISD ≤ - 11 A, d I/dt ≤ - 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 90170 S-81412-Rev. A, 07-Jul-08 .vishay....