SiHFD9220 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated Available - For Automatic Insertion - End Stackable - P-Channel - Fast Switching - Ease of Paralleling - Lead (Pb)-free Available Ro HS- PLIANT HEXDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD9220Pb F Si HFD9220-E3 IRFD9220 Si HFD9220 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya TC = 25 °C Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 °C, L = 130 m H, RG = 25 Ω, IAS = - 2.2 A (see fig. 12). c. ISD ≤ - 3.9 A, d I/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91141 S-Pending-Rev. A, 13-Jun-08 EAS IAR EAR PD d V/dt TJ, Tstg VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT - 200 ± 20 - 0.56 - 0.36 - 4.5 0.0083 420 - 0.56 0.10 1.0 - 5.0 - 55 to + 150 300d W/°C m J A m J W V/ns °C A UNIT V WORK-IN-PROGRESS .vishay. 1 IRFD9220, Si HFD9220 Vishay Siliconix THERMAL RESISTANCE...