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IRFD9210, SiHFD9210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 8.9 2.1 3.9 Single
S
FEATURES
• Dynamic dV/dt Rating
3.0
• Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • P-Channel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
HEXDIP
G
DESCRIPTION
The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.