SiHFD9210 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - For Automatic Insertion - End Stackable - P-Channel - Fast Switching - Ease of Paralleling - Lead (Pb)-free Available Available Ro HS- PLIANT HEXDIP DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance bined with high transconductance and extreme device ruggedness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD9210Pb F Si HFD9210-E3 IRFD9210 Si HFD9210 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 °C, L = 123 m H, RG = 25 Ω, IAS = - 1.6 A (see fig. 12). c. ISD ≤ - 2.3 A, d I/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91140 S-Pending-Rev. A, 23-Jun-08 TC = 25 °C EAS IAR EAR PD d V/dt TJ, Tstg VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT - 200 ± 20 - 0.40 - 0.25 - 3.2 0.0083 210 - 0.40 0.10 1.0 - 5.0 - 55 to + 150 300d W/°C m J A m J W V/ns °C A UNIT V WORK-IN-PROGRESS .vishay. 1 IRFD9210, Si HFD9210 Vishay Siliconix THERMAL RESISTANCE...