SiHFD9120 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - For Automatic Insertion - End Stackable - P-Channel - 175 °C Operating Temperature - Fast Switching - Lead (Pb)-free Available Available Ro HS- PLIANT .. HEXDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HEXDIP IRFD9120Pb F Si HFD9120-E3 IRFD9120 Si HFD9120 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 52 m H, RG = 25 Ω, IAS = - 2.0 A (see fig. 12). c. ISD ≤ - 6.8 A, d I/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91139 S-81273-Rev. A, 16-Jun-08 .vishay. 1 VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT - 100 ± 20 - 1.0 - 0.70 - 8.0 0.0083 140 - 1.0 0.13 1.3 - 5.5 - 55 to + 175 300d W/°C m J A m J W V/ns °C A UNIT V IRFD9120, Si HFD9120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL Rth JA TYP. MAX. 120 UNIT °C/W SPECIFICATIONS TJ = 25 °C,...