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TSHG8200 - High Speed Infrared Emitting Diode

Description

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Infrared radiation source for operation with CMOS cameras (illumination) High speed IR dat

Features

  • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC an.

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Datasheet Details

Part number TSHG8200
Manufacturer Vishay
File Size 110.31 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHG8200 Datasheet

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