TSHG8200 - High Speed Infrared Emitting Diode

Vishay Siliconix

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Datasheet Details

Part number	TSHG8200
Manufacturer	Vishay Siliconix
File Size	110.31 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG8200_VishaySiliconix.pdf

TSHG8200 Product details

Description

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Infrared radiation source for operation with CMOS cameras (illumination) High speed IR data transmission Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG8200 Ie (mW/sr) 180 ϕ (deg) ± 10 λP (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characteristics”

Features

Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC an.

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Published: Feb 2, 2012 |