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VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	VBT3045C
Manufacturer	Vishay
File Size	97.80 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT3045C Datasheet

Overview

www.vishay.com VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020,  LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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