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2SD601LT1 - NPN EPITAXIAL SILICON TRANSISTOR

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Part number 2SD601LT1
Manufacturer WEJ
File Size 59.42 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD601LT1 Datasheet

Full PDF Text Transcription for 2SD601LT1 (Reference)

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RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce...

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015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW T* High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 .,LCharacteristic Symbol Rating Collector-Base Voltage Vcbo 50 Collector-Emitter Voltage Vceo 45 OEmitter-Base Voltage Vebo 5 2.9 1.9 0.95 0.95 0.4 Collector Current Ic 100 CCollector Dissipation Ta=25 * PD 225 Junction Temperature Tj 150 ICStorage Temperature Tstg -55-150 Unit V V V mA mW 1. 2.4 1.3 1 . G AT E 2 .SO U RC E R 3.