2SD602LT1 Description
RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR plement to MMBT2907ALT1 Collector Dissipation: FR=1X0.75X0.062in Board,Derate 25 . Pulse Width 300uS,Duty cycle 2% DEVICE MARKING:.
2SD602LT1 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by WEJ.
| Part Number | Description |
|---|---|
| 2SD601LT1 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SD1616A | NPN Transistor |
| 2SD1781K | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SD1898 | NPN Transistor |
| 2SD2136 | NPN Transistor |
RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR plement to MMBT2907ALT1 Collector Dissipation: FR=1X0.75X0.062in Board,Derate 25 . Pulse Width 300uS,Duty cycle 2% DEVICE MARKING:.