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WINSEMI SEMICONDUCTOR

WFF8N60 Datasheet Preview

WFF8N60 Datasheet

Silicon N-Channel MOSFET

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Features
7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
Ultra-low Gate charge(Typical 28nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage (VISO=4000V AC)
Maximum Junction Temperature Range(150℃)
WFF8N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
7.5*
4.3*
30
±30
240
15
4.5
48
0.38
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 2.6
- - 62.5
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
Units
/W
/W




WINSEMI SEMICONDUCTOR

WFF8N60 Datasheet Preview

WFF8N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Electrical Characteristics(Tc=25)
WFF8N60
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS VGS=±30V,VDS=0V
- - ±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30 -
-V
Drain cut -off current
VDS=600V,VGS=0V
IDSS
VDS=480V,Tc=125
- - 10 µA
- - 100 µA
Drain -source breakdown voltage
V(BR)DSS ID=250 µA,VGS=0V
600 -
-V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2 - 4V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.75A
- 0.8 1.2 Ω
Forward Transconductance
gfs VDS=50V,ID=3.75A
- 8.7 - S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
- 1100 1430
- 135 175 pF
- 16 21
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr VDD=200V,
-
ton ID=7.5A
-
tf RG=25Ω
-
toff (Note4,5) -
30 70
80 170
ns
65 140
60 130
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=480V,
VGS=10V,
ID=7.5A
(Note4,5)
-
-
-
28 36
nC
7-
14.5 -
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
- - - 7.5 A
Pulse drain reverse current
IDRP
- - - 28 A
Forward voltage(diode)
VDSF
IDR=7.5A,VGS=0V
- - 1.4 V
Reverse recovery time
Reverse recovery charge
trr IDR=7.5A,VGS=0V, - 320 - ns
Qrr
dIDR / dt =100 A / µs
- 2.4 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=7.5A,VDD=50V,RG=0Ω,Starting TJ=25
3.ISD≤7.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7


Part Number WFF8N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFF8N60 Datasheet PDF






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