• Part: WFF8N60
  • Manufacturer: WINSEMI SEMICONDUCTOR
  • Size: 565.34 KB
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WFF8N60 Key Features

  • 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Is

Other WFF8N60 Datasheets

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Wisdom technologies Logo Wisdom technologies WFF8N60 HIGH VOLTAGE N-Channel MOSFET
Winsemi Logo Winsemi WFF8N60B Silicon N-Channel MOSFET
Winsemi Logo Winsemi WFF8N60C Silicon N-Channel MOSFET

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WFF8N60 Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.