WMS30N030 Datasheet, MOSFET, WeEn

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WMS30N030 Features and benefits

* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate .

WMS30N030 Application

RoHS 2. Features and benefits
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduct.

WMS30N030 Description

WMS30N030 is a high performance logic level N-channel MOSFET in TO220 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applicatio.

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