WMS30N085V Datasheet, MOSFET, WeEn

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WMS30N085V Features and benefits

* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate .

WMS30N085V Application

RoHS 2. Features and benefits
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduct.

WMS30N085V Description

WMS30N085V is a high performance logic level N-channel MOSFET in PDFN5X6 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applica.

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