WMS30N085E Datasheet, MOSFET, WeEn

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WMS30N085E Features and benefits

* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate .

WMS30N085E Application

h RoHS alogen-Free Lead-Free 2. Features and benefits
* Advance High Cell Density Trench Technology
* Low R.

WMS30N085E Description

WMS30N085E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer app.

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