* High ESD sensitivity devices
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Swi.

h RoHS alogen-Free Lead-Free 2. Features and benefits
* High ESD sensitivity devices
* Advance High Cell De.

WMS30N140E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer app.

WMS30N1200SK

WMS30N020V

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WMS30N034V

WMS30N045S

WMS30N050E

WMS30N050S

WMS30N085E

WMS30N085V

WMS30N250E

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