WT-2306 Description
WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE V OLTAGE 20 VOLTAGE 2 SOURCE.
WT-2306 Key Features
- Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V -Rugged and Reliable
- rDS (on)
- 608 114 86
- 10 14 39 26 9.2 1.6 2.6 0.84
- nS nS nS nS nc nc nc V