WT-2307 Datasheet | Weitron Technology

Features : - Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V - Rugged and Reliable - SOT-23 Package GATE 3 1 2 SOT-23 .. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -20 Unite V V A A A W C/W C +12 -3 -11 -1.25 1.25 100 -55 to 150 Device Marking WT2307=S07 WEITRON http://.weitron..tw Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 u A Gate-Source Threshold Voltage VDS=VGS, ID=-250 u A Gate-Source Leakage Current +10V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=-16V, VGS=0V Drain-Source On-Resistance VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-4.5A Forward Transconductance VDS=-5V, ID=-5A -20 -0.5 -0.8 -1.5 +100 1 80 100 V V n A u A mΩ -15 4 r DS (on) 70 85 ID(on) gfs - - Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 586 101 59 Switching (3) Turn-On Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω Rise Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω Turn-Off Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω Fall Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω Total Gate Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Source Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Drain Charge VDS=-10V, ID=-3A, V GS =-4.5V Drain-Source Diode Forward Voltage VDS=0V, IS=-1.25A Note: 1. Surface Mounted on FR4 Board t < _ 10sec. < _ _ 2%. 2. Pulse Test : PW 300us, Duty Cycle <...