WT-2300 Datasheet | Weitron Technology

Features : - Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V - Rugged and Reliable - SOT-23 Package DRAIN SOURCE VOLTAGE 20 VOLTAGE SOURCE GATE 3 1 2 SOT-23 .. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 20 Unite V V A A A W C/W C +10 3.8 15 1.25 1.25 100 -55 to 150 Device Marking WT2300=S00 WEITRON http://.weitron..tw Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=250 u A Gate-Source Threshold Voltage VDS=VGS, ID=250 u A Gate-Source Leakage Current +10V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=20V, VGS=0V Drain-Source On-Resistance VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A VGS=1.8V, ID=1.0A On-State Drain Current VDS=5V, VGS=4.5A Forward Transconductance VDS=5V, ID=5A 20 0.6 0.78 1.5 +100 1 40 60 75 V V n A u A mΩ 18 5 r DS (on) 32 50 62 ID(on) gfs - - Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 888 144 115 Switching (3) Turn-On Delay Time VGS =4.5V,V DD=10V, I D=1A, R L =10 Ω ,R GEN=6Ω Rise Time VGS =4.5V,V DD=10V, I D=1A, R L =10 Ω ,R GEN=6Ω Turn-Off Delay Time VGS =4.5V,V DD=10V, I D=1A, R L =10 Ω ,R GEN=6Ω Fall Time VGS =4.5V,V DD=10V, I D=1A, R L =10 Ω ,R GEN=6Ω Total Gate Charge VDS=10V, ID=3.5A, VGS =4.5V Gate-Source Charge VDS=10V, ID=3.5A, VGS =4.5V Gate-Drain Charge VDS=10V, ID=3.5A, VGS =4.5V Drain-Source Diode Forward Voltage VGS=0V, IS=1.25A td(on) tr td(off ) tf Qg Qgs Qgd - 31.8...