Datasheet4U Logo Datasheet4U.com

WT-2301 - Surface Mount P-Channel Enhancement Mode MOSFET

Key Features

  • Super high dense cell design for low RDS(ON) R DS(ON).

📥 Download Datasheet

Datasheet Details

Part number WT-2301
Manufacturer Weitron Technology
File Size 174.18 KB
Description Surface Mount P-Channel Enhancement Mode MOSFET
Datasheet download datasheet WT-2301 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WT-A521 (WT-A521 / WT-A522) UHF RFID Tag Fujitsu
WT-A522 (WT-A521 / WT-A522) UHF RFID Tag Fujitsu
WT-H-154D240I-CTP TFT LCD WillTron
WT-H-B24M36-4L03G TFT LCD WillTron
WT-H-P156E30-48L01P TFT LCD WillTron

Other Datasheets by Weitron Technology

Part Number Description
WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET
WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET
WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET
WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET
WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE V OLTAGE - 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@VGS =-1.8V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -20 Unite V V A A A W C/W C +12 -3.4 -12 -1.25 1.