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WT-2306 - Surface Mount N-Channel Enhancement Mode MOSFET

Key Features

  • Super high dense cell design for low R DS(ON) R DS(ON).

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Datasheet Details

Part number WT-2306
Manufacturer Weitron Technology
File Size 140.31 KB
Description Surface Mount N-Channel Enhancement Mode MOSFET
Datasheet download datasheet WT-2306 Datasheet

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Other Datasheets by Weitron Technology

Part Number Description
WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE V OLTAGE 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 20 Unite V V A A A W C/W C +8 2.8 12 1.25 1.25 100 -55 to 150 Device Marking WT2306=S06 WEITRON http://www.weitron.