WT-3401 Description
WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 30 VOLTAGE 2 SOURCE.
WT-3401 Key Features
- Super high dense cell design for low RDS(ON) .. R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V -Rugged and Rel
- 75 100
- 653 130 97
- 13 7 58 26 13.5 7 2.3 2.8 -0.8
- nS nS nS nS nc nc nc nc V
- I D , DRAIN CURRENT(A) -I D ,DRAIN CURRENT(A)
- VDS , DRAIN-TO-SOURCE VOLTAGE(V)
- VGS , GATE-TO-SOURCE VOLTAGE(V)
- VDS , DRAIN-T