WT-3401 Datasheet | Weitron Technology

Features : - Super high dense cell design for low RDS(ON) .. R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V - Rugged and Reliable - SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C +20 -3 -10 -1.25 1.25 100 -55 to 150 Device Marking WT3401=T01 WEITRON http://.weitron..tw Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 u A Gate-Source Threshold Voltage VDS=VGS, ID=-250 u A +20V VDS=0V, VGS=.. Gate-Source Leakage Current Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-3.0A VGS=-4.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-10A Forward Transconductance VDS=-5V, ID=-3A -30 -1 -1.5 -2.5 +100 -1 V V n A u A mΩ 6 5 r DS (on) - 75 100 ID(on) gfs - A S Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 653 130 97 Switching(3) Turn-On Delay Time V GS =-10V,VDD =-15V, ID =-1A, R L =15 Ω ,RGEN =6Ω Rise Time V GS =-10V,VDD =-15V, ID =-1A, R L =15 Ω ,RGEN =6Ω Turn-Off Delay Time V GS =-10V,VDD =-15V, ID =-1A, R L =15 Ω ,RGEN =6Ω Fall Time V GS =-10V,VDD =-15V, ID =-1A, R L =15 Ω ,RGEN =6Ω Total Gate Charge VDS=-15V, ID=-3A, V GS =-10V Total Gate Charge VDS=-15V, ID=-3A, V GS =-4.5V Gate-Source Charge VDS=-15V, ID=-3A, V GS =-10V Gate-Drain Charge VDS=-15V, ID=-3A, V GS =-10V Drain-Source Diode Forward Voltage VGS=0V, IS=-1.25A td(on) tr td(off ) tf Qg Qg Qgs Qgd - 13 7 58 26 13.5 7...