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WT-3401
Surface Mount P-Channel Enhancement Mode MOSFET
1 3 DRAIN
DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 30 VOLTAGE
2
SOURCE
Features:
*Super high dense cell design for low RDS(ON) www.DataSheet4U.com R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable *SOT-23 Package
GATE
3 1 2
SOT-23
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C
+20 -3 -10 -1.25 1.25 100 -55 to 150
Device Marking
WT3401=T01
WEITRON
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