WT-2307 Description
WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 20 VOLTAGE 2 SOURCE.
WT-2307 Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V -Rugged and Relia
- 586 101 59
- 6.5 32.1 58.4 48 5.92 1.36 1.4 -1.815
- nS nS nS nS nc nc nc V
- ID , DRAIN CURRENT(A) -ID , DRAIN CURRENT(A)
- VDS , DRAIN-TO-SOURCE VOLTAGE(V)
- VGS , GATE-TO-SOURCE VOLTAGE(V)
- VGS =-4.5V I D =-4A
- C ,CAPACITANCE( P F)
- VGS , GATE-TO-SOURCE VOLTAGE(V)