WTC2305 Description
WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE.
WTC2305 Key Features
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V -Rugged and Reliable -Simple Drive Requirement
WTC2305 Applications
- Power Management in Notebook puter -Portable Equipment -Battery Powered System