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WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-30 ±12 -4.2 -30 1.4 140 -55~+150
Unit
V
A
Pulsed Drain Current
1,2
Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3
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WTC2305 Datasheet
