Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features
:
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V
- Rugged and Reliable
- Simple Drive Requirement
- SOT-23 Package
SOURCE
3 1 2
SOT-23
Applications
- Power Management in Notebook puter
- Portable Equipment
- Battery Powered System
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-30 ±12 -4.2 -30 1.4 140 -55~+150
Unit
Pulsed Drain Current
1,2
Total Power Dissipation(T A =25˚C) Maximum...