WTC2305A Datasheet | Weitron Technology

P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE .. Features : - Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V - Rugged and Reliable - Capable of 2.5V Gate Drive - Simple Drive Requirement - SOT-23 Package 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A ,(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -3.2 -2.6 -10 1.38 90 -55~+150 Unit Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3...