WTC2305A Description
WTC2305A P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2.
WTC2305A Key Features
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V -Rugged and Reliable -Capable of 2.5V Gate Driv
- 30 ±12 -3.2 -2.6 -10 1.38 90 -55~+150
- V ns nC
- 5.0V -4.0V
- I D ,DRAIN CURRENT (A)