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WTC2305A
P-Channel Enhancement Mode Power MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
2
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Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package
3 1 2
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A ,(T A Pulsed Drain Current
1,2
Unless Otherwise Specified) Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-30 ±12 -3.2 -2.6 -10 1.38 90 -55~+150
Unit
V
A
Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range 3
W ˚C/W ˚C
Device Marking
WTC2305A=2305A
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WTC2305A Datasheet
