Weitron Technology WTC2305
P-Channel Enhancement Mode Power MOSFET
| Part No. | WTC2305 |
|---|---|
| Datasheet | WTC2305 Download |
| Manufacturer |  Weitron Technology |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23APPLICATIONS
*Power Management in Notebook Computer *Portable Equipment *Battery Powered SystemMAXIMUM RATINGS
(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -4.2 -30 1.4 140 -55~+150 Unit V A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 W ˚C /W ˚C Operating Junction and Storage Temperature Range Device Marking WTC2305= http//: WEITRON 1/4 Rev.B 05-Jun-09 WTC2305ELECTRICAL CHARACTERISTICS
(TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage C urrent VGS = ±12V Drain- Source Leakage Curren...
