WTC2306 Description
WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE.
WTC2306 Key Features
- Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V
- Rugged and Reliable
- Simple Drive Requirement
- SOT-23 Package
WTC2306 Applications
- Power Management in Notebook puter