SOT-23 D 3 12 GS Pin configuration (Top view)
* Trench Technology
* Supper high density cell design
* Excellent ON resistance
* Extremely Low Threshold .

* DC/DC converters
* Power supply converters circuit
* Load/Power Switching for portable device PE = Device.

The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. S.

WPM2080

WPM2081

WPM2083

WPM2005

WPM2005B

WPM2006

WPM2009D

WPM2014

WPM2015

WPM2015-3

WPM2019

WPM2026

WPM2031