New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS compliant
BVDSS = 800 V RDS(on) = 0.35 Ω ID = 11 A.
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PFP80T420 / PFF80T420
PFP80T420/PFF80T420
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS compliant
BVDSS = 800 V RDS(on) = 0.