The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SFTN2922R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Parameter
Peak Drain Current 3) Power Dissipation 2)
Operating Junction and Storage Temperature Range
TC = 25℃ TC = 100℃
TC = 25℃ TC = 100℃
Symbol
Value
Unit
VDS
100
V
VGS
± 20
V
ID
7 5
A
IDM
10
A
PD
17 8.5
W
TJ,Tstg
- 55 to + 150
℃
Thermal Characteristics Parameter
Thermal Resistance from Juntion to Ambient 1) Thermal Resistance from Juntion to Ambient 1) 4)
(t ≤ 10 s) (Steady-State)
Symbol RθJA
Max. 25 50
Thermal Resistance from Juntion to Case
(Steady-State)
RθJC
8.8
1) The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
SFTN2922R Datasheet
