WFD7N65S mosfet equivalent, power mosfet.
� Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant
General Description
Power MOSFET is fabricated using advanced super junction.
which require superior power density and outstanding efficiency.
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VD.
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