WFD7N65L - Silicon N-Channel MOSFET

Description

Silicon N-Channel MOSFET

Features

7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 21nC).
Fast Switching Capability.
100%Avalanche Tested.
Improved dv/dt capability General.

WINSEMI

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Datasheet Details

Part number	WFD7N65L
Manufacturer	WINSEMI
File Size	333.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFD7N65L Datasheet

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Full PDF Text Transcription

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WFD7N65L Product Description Silicon N-Channel MOSFET Features � 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 21nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability General Description This Power MOSFET is produced using advanced planar stripe,VDMOS technology. This technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.

Published: Mar 18, 2020 |