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WFD20N06 - Silicon N-Channel MOSFET

Description

This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for high efficiency switch mode power supply.

Features

  • 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V.
  • Ultra-low Gate Charge(Typical 6.1nC).
  • High Current Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFD20N06
Manufacturer Winsemi
File Size 610.10 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD20N06 Datasheet

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Full PDF Text Transcription

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WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
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