Winsemi WFD20N06
This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.| Part No. | WFD20N06 |
|---|---|
| Datasheet | WFD20N06 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V● Ultra-low Gate Charge(Typical 6.1nC)
● High Current Capability
● 100%Avalanche Tested
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
electronic Lamp ballasts based on half bridge and UPS.ABSOLUTE MAXIMUM RATINGS
Symbol Parameter V DSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed tp=10us VGS Gate to Source Voltage-Continuous VGS Gate to Source Voltage-Non-Repetitive(tp<10us) EAS Single Pulsed Avalanche Energy Is Source Current (Body Diode) PD Total Power Dissipation(@Tc=25℃) TJ, Tstg Junction an
