WFD5N50 Description
This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp...
WFD5N50 Key Features
- 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 32nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)