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WFD5N50 - Silicon N-Channel MOSFET

Description

This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics.

Features

  • 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 32nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFD5N50
Manufacturer Winsemi
File Size 739.29 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD5N50 Datasheet

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Full PDF Text Transcription

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Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
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