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WFD7N65S - Power MOSFET

Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg =19nC).
  • 100% UIS tested.
  • RoHS compl iant General.

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Datasheet Details

Part number WFD7N65S
Manufacturer Winsemi
File Size 272.22 KB
Description Power MOSFET
Datasheet download datasheet WFD7N65S Datasheet

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Full PDF Text Transcription

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WFD7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
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