Datasheet Details
| Part number | WFP3205 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 218.79 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFP3205 Datasheet
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| Part number | WFP3205 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 218.79 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
WFP3205 Datasheet
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This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology.
This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1) Parameter Value 50 110 80 390 ±20 20 5.0 200 1.3 -55~150 300 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.75 62 Units ℃/W ℃/W ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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