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WFW13N50 Datasheet Silicon N-Channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFW13N50
Manufacturer Winsemi
File Size 625.20 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW13N50 Datasheet

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.56 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) (Note2) (Note1) (Note3) (Note1) 8 52 ±30 845 5 3.5 218 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 500 13 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.58 62.5 Units ℃/W ℃/W ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 13N5 0 WFW FW13N5 13N50 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V Min ±30 - Type - Max ±100 1 10 Unit nA V µA µA V V/℃ Drain cut -off current IDSS VDS=400V,TC=125℃ ID=250 µA,VGS=0V ID=

Overview

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.

Key Features

  • 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 43nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.