WFW13N50 Key Features
- 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
- Ultra-low Gate charge(Typical 43nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
- Part: WFW13N50
- Manufacturer: Winsemi
- Size: 625.20 KB
Related Winsemi Datasheets
| Part Number | Description |
|---|---|
| WFW18N50N | Silicon N-Channel MOSFET |
| WFW18N50W | Silicon N-Channel MOSFET |
| WFW20N60W | Silicon N-Channel MOSFET |
| WFW24N50W | Silicon N-Channel MOSFET |
| WFW9N90W | Silicon N-Channel MOSFET |
WFW13N50 Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.