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Wisdom technologies

WFF12N60 Datasheet Preview

WFF12N60 Datasheet

N-Channel MOSFET

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HIGH VOLTAGE N-Channel MOSFET 
 
 
WFF12N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 42nC (Typ.)
BVDSS=600V,ID=12A
RDS(on) :0.7 (Max) @VG=10V
100% Avalanche Tested
 
GD S
G!
D
!
◀▲
!
S
 
TO220F   
GGate,DDrain,SSourse 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF12N60
600
12*
6.7*
±30
870
12
51
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics 
Symbol
Parameter
RθJC
Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
2.27
62.5
Units
/W
/W
www.wisdom  -technologie  s.com
    Rev.A0,August , 2010 |  1 
 




Wisdom technologies

WFF12N60 Datasheet Preview

WFF12N60 Datasheet

N-Channel MOSFET

No Preview Available !

HIGH VOLTAGE N-Channel MOSFET 
Electrical Characteristics Tc=25unless other wise noted 
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS
BVDSS/
△TJ
IDSS
IGSSF
IGSSR
Drain-Sourse Breakdown Voltage
Breakdown Voltage Temperature
Conficient
Zero Gate Voltage Drain Current
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
ID=250μAVGS=0
ID=250μA,Reference
to 25
Vds=600V, Vgs=0V
Vds=480V, Tc=125
Vgs=+30V, Vds=0V
Vgs=-30V, Vds=0V
600 --
--
-- 0.71 --
-- -- 10
100
-- -- 100
-- -- -100
V
V/
μA
μA
nA 
nA 
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=6A,Vgs=10V
2 -- 4
V
-- -- 0.7
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25VVGS=0
f=1.0MHz
-- 1480 1900 pF
-- 200 270 pF
-- 25 35 pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300VID=12A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V
ID=12A (Note 3,4)
--
--
--
--
--
--
30 70
115 240
95 200
85 180
42 54
8.6 --
21 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS Maximun Continuous Drain-Sourse Diode Forward Current --
ISM Maximun Plused Drain-Sourse DiodeForwad Current
--
VSD
Drain-Sourse Diode Forward
Voltage
-- --
-- 12
-- 48
-- 1.4
A
A
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
-- 380 -- -- nS
--
3.5 --
-- μC
*Notes  1, L=11.1mH, IAS=12A, VDD=50V, RG=25, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300μs, Duty Cycle 2%
4, Essentially Independent of Operating Temperature 
www.wis dom-technol ogies.com     Rev.A0,August , 2010 | 
2 
 


Part Number WFF12N60
Description N-Channel MOSFET
Maker Wisdom technologies
PDF Download

WFF12N60 Datasheet PDF






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