WFN1N60 Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg= 10nC (Typ.)
- BVDSS=600V,ID=1A
- RDS(on) : 8 Ω (Max) @VG=10V
- 100% Avalanche Tested
- Part: WFN1N60
- Manufacturer: Wisdom technologies
- Size: 886.73 KB
Other WFN1N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFN1N60 | Silicon N-Channel MOSFET |
|
Winsemi |
WFN1N60C | Power MOSFET |
|
Winsemi |
WFN1N60N | Silicon N-Channel MOSFET |
|
Winsemi |
WFN1N60NC | Silicon N-Channel MOSFET |
WFN1N60 Description
HIGH VOLTAGE N-Channel MOSFET WFN1 N60 600V N-Channel MOSFET.