C6D08065G diode equivalent, 8a silicon carbide schottky diode.
* Low forward voltage (VF) drop with positive
temperature coefficient
* Zero reverse recovery current/forward recovery
voltage
* Temperature-independent switc.
TO-263-2
Package Types: TO-263-2 PN: C6D08065G
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With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diode.
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